Infineon Technologies IPN80R750P7ATMA1

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Series

HiPerFET™, Polar™

Rds On (Max) @ Id, Vgs

620mOhm @ 3.6A, 10V

FET Type

N-Channel

Power Dissipation (Max)

89W (Tc)

Packaging

Cut Tape (CT)

Supplier Device Package

DPAK

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1135pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number

FCD620N60

Vgs(th) (Max) @ Id

5V @ 250µA