Infineon Technologies IPN80R600P7ATMA1

Product Details

FET Type

N-Channel

Supplier Device Package

8-PQFN (5x6)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

10A (Ta), 56A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

5V @ 150µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

31mOhm @ 34A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.6W (Ta)