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Infineon Technologies IPN80R1K4P7ATMA1

MOSFET N-CHANNEL 800V 4A SOT223

Manufacturer
Infineon Technologies
Datasheet
Price
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Stock
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Product Details

Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
10.4nC @ 4.5V
Vgs (Max)
±8V
Drain to Source Voltage (Vdss)
20V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
920pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
3.4A (Ta)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Mounting Type
Surface Mount
Package / Case
6-PowerUFDFN
Vgs(th) (Max) @ Id
1V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
39mOhm @ 4A, 4.5V
Series
µCool™
Power Dissipation (Max)
600mW (Ta)
FET Type
P-Channel
Supplier Device Package
6-UDFN (1.6x1.6)