Infineon Technologies IPN70R1K4P7SATMA1

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

4.8A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

4-UFBGA, WLBGA

Vgs(th) (Max) @ Id

1.2V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

26mOhm @ 1A, 4.5V

Series

-

Power Dissipation (Max)

900mW (Ta)

FET Type

N-Channel

Supplier Device Package

U-WLB1010-4

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

12V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 6V