Infineon Technologies IPN60R3K4CEATMA1

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

425pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

3.9A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Vgs(th) (Max) @ Id

1.5V @ 250µA

Operating Temperature

-55°C ~ 175°C (TA)

Rds On (Max) @ Id, Vgs

120mOhm @ 2.8A, 4.5V

Series

Automotive, AEC-Q101, TrenchFET®

Power Dissipation (Max)

3W (Tc)

FET Type

P-Channel

Supplier Device Package

TO-236 (SOT-23)

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

8nC @ 4.5V

Vgs (Max)

±8V

Drain to Source Voltage (Vdss)

20V