Images are for reference only. See Product Specifications for product details
Infineon Technologies IPN60R360P7SATMA1
MOSFET N-CHANNEL 600V 9A SOT223
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 2865
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- D-Pak
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 34nC @ 5V
- Vgs (Max)
- ±16V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 800pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 105mOhm @ 10A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 79W (Tc)