Infineon Technologies IPN50R2K0CEATMA1

Product Details

Packaging

Bulk

Gate Charge (Qg) (Max) @ Vgs

130nC @ 20V

Vgs (Max)

+25V, -10V

Drain to Source Voltage (Vdss)

1200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2560pF @ 1000V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

20V

Mounting Type

Chassis Mount

Package / Case

SOT-227-4, miniBLOC

Vgs(th) (Max) @ Id

3V @ 1mA (Typ)

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

100mOhm @ 20A, 20V

Series

-

Power Dissipation (Max)

165W (Tc)

FET Type

N-Channel

Supplier Device Package

SOT-227