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Infineon Technologies IPL65R1K5C6SATMA1
MOSFET N-CH 8TSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.45
- Stock
- 0
Product Details
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 22.2nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1252pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta), 52A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA
- Operating Temperature
- -
- Rds On (Max) @ Id, Vgs
- 5.8mOhm @ 30A, 10V
- Series
- -
- Power Dissipation (Max)
- -
- FET Type
- N-Channel
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)