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Infineon Technologies IPL60R199CPAUMA1
MOSFET N-CH 650V 16.4A 4VSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.54
- Stock
- 2990
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 902pF @ 400V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 17A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSFN
- Vgs(th) (Max) @ Id
- 4V @ 260µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 150mOhm @ 5.3A, 10V
- Series
- CoolMOS™ G7
- Power Dissipation (Max)
- 106W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-HSOF-8-2
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V