Images are for reference only. See Product Specifications for product details
Infineon Technologies IPI80P04P4L08AKSA1
MOSFET P-CH TO262-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2.3A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3.5V @ 60µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.1Ohm @ 760mA, 10V
- Series
- CoolMOS™ C6
- Power Dissipation (Max)
- 21.6W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- Thin-PAK (5x6)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 6.7nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 140pF @ 100V