Infineon Technologies IPI600N25N3GAKSA1

Product Details

Vgs(th) (Max) @ Id

4.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

500mOhm @ 5.5A, 10V

Series

-

Power Dissipation (Max)

75W (Tc)

FET Type

N-Channel

Supplier Device Package

LPTS

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB