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Infineon Technologies IPI147N12N3GAKSA1
MOSFET N-CH 120V 56A TO262-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.94
- Stock
- 0
Product Details
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 90mOhm @ 2.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 791mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOIC
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 11.25nC @ 10V
- Vgs (Max)
- +2V, -15V
- Drain to Source Voltage (Vdss)
- 15V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 2.3A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.7V, 10V