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Infineon Technologies IPI023NE7N3 G
MOSFET N-CH 75V 120A TO262-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 8130pF @ 37.5V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Vgs(th) (Max) @ Id
- 3.8V @ 155µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.4mOhm @ 100A, 10V
- Power Dissipation (Max)
- 214W (Tc)
- Series
- OptiMOS™
- Supplier Device Package
- PG-TO262-3
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 117nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 75V