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Infineon Technologies IPG20N10S4L35ATMA1

MOSFET 2N-CH 8TDSON

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
14887

Product Details

Base Part Number
SI6913
Vgs(th) (Max) @ Id
900mV @ 400µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
21mOhm @ 5.8A, 4.5V
Series
TrenchFET®
Supplier Device Package
8-TSSOP
FET Type
2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
28nC @ 4.5V
Packaging
Digi-Reel®
Drain to Source Voltage (Vdss)
12V
FET Feature
Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds
-
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
4.9A
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)