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Infineon Technologies IPG20N06S4L14ATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Feature
- Logic Level Gate
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Part Status
- Obsolete
- Power - Max
- 1.65W
- Mounting Type
- Surface Mount
- Package / Case
- 8-TDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 500mA, 4.5V
- Supplier Device Package
- TLM832DS
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 2.4nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 20V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 220pF @ 10V