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Infineon Technologies IPG20N06S415ATMA1
MOSFET 2N-CH 8TDSON
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Supplier Device Package
- 8-DFN (5x6)
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss)
- 30V
- Packaging
- Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 1960pF @ 15V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 15.4A, 29.7A
- Part Status
- Obsolete
- Power - Max
- 1.13W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 2.1V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 20A, 10V