Infineon Technologies IPG20N04S409ATMA1

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

2.5V @ 1mA

Operating Temperature

150°C (TJ)

Rds On (Max) @ Id, Vgs

200mOhm @ 6.5A, 10V

Series

-

Power Dissipation (Max)

850mW (Ta), 20W (Tc)

FET Type

P-Channel

Supplier Device Package

CPT3