Infineon Technologies IPDD60R190G7XTMA1

Product Details

Rds On (Max) @ Id, Vgs

2.6mOhm @ 100A, 10V

Series

OptiMOS™

Power Dissipation (Max)

3W (Ta), 136W (Tc)

FET Type

N-Channel

Supplier Device Package

D²PAK (TO-263AB)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4100pF @ 30V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

25A (Ta), 100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

2.8V @ 75µA

Operating Temperature

-55°C ~ 175°C (TJ)