Infineon Technologies IPDD60R150G7XTMA1

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

175pF @ 100V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

3A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Base Part Number

STU4N

Vgs(th) (Max) @ Id

5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

SuperMESH5™

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

60W (Tc)

Packaging

Tube

Supplier Device Package

IPAK (TO-251)

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V