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Infineon Technologies IPD90R1K2C3ATMA1
MOSFET N-CH 900V 5.1A TO-252
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 10198
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.25V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5mOhm @ 17A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 2.5W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4500pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V