Infineon Technologies IPD90N06S4L06ATMA1

Product Details

Rds On (Max) @ Id, Vgs

2.3mOhm @ 100A, 10V

Power Dissipation (Max)

300W (Tc)

Series

OptiMOS™

Supplier Device Package

PG-TO262-3

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

206nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

14400pF @ 37.5V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Vgs(th) (Max) @ Id

3.8V @ 273µA

Operating Temperature

-55°C ~ 175°C (TJ)