Images are for reference only. See Product Specifications for product details
Infineon Technologies IPD80R2K0P7ATMA1
MOSFET N-CH 800V 3A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 6687
Product Details
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 50mOhm @ 16A, 10V
- Series
- -
- Power Dissipation (Max)
- 20W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- CPT3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 16nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 45V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 16A (Ta)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 4V, 10V
- Mounting Type
- Surface Mount