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Infineon Technologies IPD80R1K0CEBTMA1
MOSFET N-CH 800V 5.7A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- 8-PowerTDFN
- Base Part Number
- IRFH4226
- Vgs(th) (Max) @ Id
- 2.1V @ 50µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- FASTIRFET™, HEXFET®
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 30A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3.4W (Ta), 46W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- 8-PQFN (5x6)
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 32nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 25V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 2000pF @ 13V
- Part Status
- Obsolete
- Current - Continuous Drain (Id) @ 25°C
- 30A (Ta), 70A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V