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Infineon Technologies IPD80N04S306BATMA1
MOSFET N-CHANNEL_30/40V
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.62
- Stock
- 0
Product Details
- Package / Case
- 8-WFDFN Exposed Pad
- Vgs(th) (Max) @ Id
- -
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.6mOhm @ 17.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-WPAK
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 12nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2170pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 35A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount