Images are for reference only. See Product Specifications for product details
Infineon Technologies IPD80N04S306ATMA1
MOSFET N-CH 40V 90A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 12.6mOhm @ 15A, 10V
- Series
- -
- Power Dissipation (Max)
- 6.25W (Ta), 83W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-DFN-EP (3.3x3.3)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 38nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2075pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Ta), 50A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Vgs(th) (Max) @ Id
- 3.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)