Images are for reference only. See Product Specifications for product details
Infineon Technologies IPD70N12S311ATMA1
MOSFET N-CH 120V 70A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.87
- Stock
- 0
Product Details
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Full Pack, I²Pak
- Vgs(th) (Max) @ Id
- 3.8V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 15.8mOhm @ 20A, 10V
- Series
- SDMOS™
- Power Dissipation (Max)
- 2.1W (Ta), 33W (Tc)
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 54nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 100V
- Vgs (Max)
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds
- 3220pF @ 50V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 7.8A (Ta), 30A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 7V, 10V