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Infineon Technologies IPD65R660CFDAATMA1
MOSFET N-CH TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.81
- Stock
- 0
Product Details
- Power Dissipation (Max)
- 41W (Tc)
- Series
- -
- Supplier Device Package
- TO-251
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 13.9nC @ 10V
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 351pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.6A (Tc)
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 155°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.3Ohm @ 2.5A, 10V