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Infineon Technologies IPD65R420CFDBTMA1
MOSFET N-CH 650V 8.7A TO252
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 31.5nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 870pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 8.7A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4.5V @ 300µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 420mOhm @ 3.4A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 83.3W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO252-3