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Infineon Technologies IPD65R400CEAUMA1

MOSFET N-CH 650V TO-252

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
4947

Product Details

Vgs(th) (Max) @ Id
3.5V @ 80µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
2Ohm @ 1.7A, 10V
Series
CoolMOS™ P7
Power Dissipation (Max)
7W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-SOT223
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
950V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-261-3