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Infineon Technologies IPD65R380C6BTMA1
MOSFET N-CH 650V 10.6A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 3003
Product Details
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 9.6mOhm @ 18A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.9W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® SO-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 100nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 11A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8