Images are for reference only. See Product Specifications for product details
Infineon Technologies IPD60R650CEBTMA1
MOSFET N-CH 600V 7A TO252
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Stub Leads, IPak
- Vgs(th) (Max) @ Id
- 3.5V @ 0.21mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 600mOhm @ 1A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 86W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO251-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 22nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 700V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 474pF @ 100V
- FET Feature
- Super Junction
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Tc)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 10V