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Infineon Technologies IPD60R600P7SAUMA1
MOSFET N-CH 600V 6A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- U-MOSVIII-H
- Power Dissipation (Max)
- 700mW (Ta), 30W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-TSON Advance (3.3x3.3)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 15nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1300pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13A (Ta)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 6.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 4V @ 200µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 14mOhm @ 6.5A, 10V