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Infineon Technologies IPD60R450E6BTMA1

MOSFET N-CH 600V 9.2A TO252-3

Manufacturer
Infineon Technologies
Datasheet
Price
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Stock
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Product Details

Rds On (Max) @ Id, Vgs
750mOhm @ 2A, 10V
Series
CoolMOS™
Power Dissipation (Max)
48W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO252-3
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
17.2nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
600V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
373pF @ 100V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Part Status
Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
3.5V @ 170µA
Operating Temperature
-55°C ~ 150°C (TJ)