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Infineon Technologies IPD600N25N3GATMA1
MOSFET N-CH 250V 25A
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- 8-PowerVDFN
- Base Part Number
- STL135
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Series
- Automotive, AEC-Q101, STripFET™ F7
- Rds On (Max) @ Id, Vgs
- 3.6mOhm @ 13A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 4.8W (Ta), 135W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- PowerFlat™ (5x6)
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 103nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 80V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 6800pF @ 40V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 130A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V