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Infineon Technologies IPD50R500CEATMA1
MOSFET N-CH 500V 7.6A PG-TO252
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 10mOhm @ 100A
- Series
- -
- Power Dissipation (Max)
- 535W (Tc)
- FET Type
- -
- Supplier Device Package
- SOT-227
- Packaging
- Tube
- Drain to Source Voltage (Vdss)
- 1700V
- Vgs (Max)
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 14400pF @ 800V
- Technology
- SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C
- 160A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Part Status
- Obsolete
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- -