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Infineon Technologies IPD50R399CPATMA1
LOW POWER_LEGACY
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.8
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 7420pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 45A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3mOhm @ 22.5A, 10V
- Series
- U-MOSVI
- Power Dissipation (Max)
- 1.6W (Ta), 45W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- 8-SOP Advance (5x5)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 190nC @ 10V
- Vgs (Max)
- +20V, -25V
- Drain to Source Voltage (Vdss)
- 30V