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Infineon Technologies IPD50N06S4L12ATMA2
MOSFET N-CH 60V 50A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 8692
Product Details
- Series
- -
- Power Dissipation (Max)
- 11.5W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 6-PQFN (2x2)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 8nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 660pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 18.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 6-VDFN Exposed Pad
- Vgs(th) (Max) @ Id
- 2.3V @ 10µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 11A, 10V