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Infineon Technologies IPD50N04S309ATMA1
MOSFET N-CH 40V 50A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.44
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.4mOhm @ 50A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.5W (Ta), 69W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- PG-TDSON-8-5
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 57.7nC @ 10V
- Vgs (Max)
- ±25V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4240pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 14.9A (Ta), 78.6A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3V @ 110µA