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Infineon Technologies IPD25CN10NGATMA1

MOSFET N-CH 100V 35A TO252-3

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
3986

Product Details

Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
12nC @ 5V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
25V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
2V @ 1mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
10.5mOhm @ 25A, 10V
Series
TrenchMOS™
Power Dissipation (Max)
93W (Tc)
FET Type
N-Channel
Supplier Device Package
D2PAK