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Infineon Technologies IPD180N10N3GATMA1
MV POWER MOS
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.44
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.2Ohm @ 1.7A, 10V
- Series
- CoolMOS™ P7
- Power Dissipation (Max)
- 6.8W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-SOT223
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 11nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 300pF @ 500V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4.5A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-3
- Vgs(th) (Max) @ Id
- 3.5V @ 80µA