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Infineon Technologies IPD12CNE8N G

MOSFET N-CH 85V 67A TO252-3

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
0

Product Details

Part Status
Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 14µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
80mOhm @ 7A, 10V
Series
OptiMOS™
Power Dissipation (Max)
47W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO252-3
Packaging
Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
55V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
293pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
17A (Tc)