Images are for reference only. See Product Specifications for product details
Infineon Technologies IPD12CN10NGATMA1
MOSFET N-CH 100V 67A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.84
- Stock
- 0
Product Details
- Operating Temperature
- -
- Series
- STripFET™
- Rds On (Max) @ Id, Vgs
- -
- FET Type
- N-Channel
- Power Dissipation (Max)
- -
- Packaging
- Tape & Reel (TR)
- Supplier Device Package
- I2PAK (TO-262)
- Vgs (Max)
- -
- Gate Charge (Qg) (Max) @ Vgs
- 60nC @ 25V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 80A
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- -
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Base Part Number
- STI100N
- Vgs(th) (Max) @ Id
- -