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Infineon Technologies IPD053N08N3GATMA1
MOSFET N-CH 80V 90A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 20200
Product Details
- Rds On (Max) @ Id, Vgs
- 7.8mOhm @ 16.4A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.5W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 1212-8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 23nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 10.5A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® 1212-8
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)