Images are for reference only. See Product Specifications for product details
Infineon Technologies IPD050N10N5ATMA1
MOSFET N-CH 100V 80A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.99
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2962pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6mOhm @ 20A, 10V
- Series
- Automotive, AEC-Q101
- Power Dissipation (Max)
- 2.8W (Ta), 125W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220AB
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 47.1nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V