Images are for reference only. See Product Specifications for product details

Infineon Technologies IPD034N06N3GATMA1

MOSFET N-CH 60V 100A TO252-3

Manufacturer
Infineon Technologies
Datasheet
Price
1.52
Stock
503

Product Details

Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3120pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 100A (Tc)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
8-VQFN Exposed Pad
Vgs(th) (Max) @ Id
4V @ 100µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.5mOhm @ 50A, 10V
Series
HEXFET®
Power Dissipation (Max)
3.6W (Ta), 114W (Tc)
FET Type
N-Channel
Supplier Device Package
PQFN (5x6)