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Infineon Technologies IPD031N03LGATMA1
MOSFET N-CH 30V 90A TO252-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.5
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 184mOhm @ 940mA, 4.5V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 236mW (Ta)
- FET Type
- P-Channel
- Supplier Device Package
- SC-89-6
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 6.86nC @ 5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 308pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)