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Infineon Technologies IPC30S2SN08NX2MA1
MV POWER MOS
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.3
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 1mOhm @ 160A, 10V
- Supplier Device Package
- D2PAK (7-Lead)
- Gate Charge (Qg) (Max) @ Vgs
- 252nC @ 10V
- Series
- HEXFET®
- Drain to Source Voltage (Vdss)
- 24V
- FET Type
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds
- 7700pF @ 19V
- Packaging
- Tube
- Current - Continuous Drain (Id) @ 25°C
- 240A (Tc)
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab)
- Vgs(th) (Max) @ Id
- 4V @ 250µA