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Infineon Technologies IPC302N25N3AX1SA1
MOSFET N-CH 250V 1A SAWN ON FOIL
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.68
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 15mOhm @ 63A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 441W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SUPER-247™ (TO-274AA)
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 390nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 150V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 6810pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 105A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-274AA
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)