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Infineon Technologies IPC218N06L3X1SA1
MOSFET N-CH 60V 3A SAWN ON FOIL
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.04
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 2.4mOhm @ 25A, 8V
- Series
- NexFET™
- Power Dissipation (Max)
- 3.1W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-VSON-CLIP (5x6)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 19nC @ 4.5V
- Vgs (Max)
- +10V, -8V
- Drain to Source Voltage (Vdss)
- 25V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3100pF @ 12.5V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 31A (Ta), 100A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 3V, 8V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)