Infineon Technologies IPC100N04S51R9ATMA1

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

363pF @ 50V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number

STD7

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

150°C (TJ)

Series

MDmesh™ II

Rds On (Max) @ Id, Vgs

900mOhm @ 2.5A, 10V

FET Type

N-Channel

Power Dissipation (Max)

45W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

DPAK

Vgs (Max)

±25V

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V